A non-transitory machine-readable storage device includes executable instructions that, when executed, cause one or more processors to calculate an effective application density for switches in fabrics. The processors are further caused to calculate an effective application density for the fabrics using the switch application densities. The processors are further caused to recommend deployment of an application on a first switch in a first fabric if the effective application density of the first switch is below a first threshold and the effective application density of the first fabric is below a second threshold.