Invention Grant
- Patent Title: Enhanced vbasis laser diode package
- Patent Title (中): 增强型vbasis激光二极管封装
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Application No.: US12748724Application Date: 2010-03-29
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Publication No.: US08811445B2Publication Date: 2014-08-19
- Inventor: Robert J. Deri , Diana Chen , Andy Bayramian , Barry Freitas , Jack Kotovsky
- Applicant: Robert J. Deri , Diana Chen , Andy Bayramian , Barry Freitas , Jack Kotovsky
- Applicant Address: US CA Livermore
- Assignee: Lawrence Livermore National Security, LLC
- Current Assignee: Lawrence Livermore National Security, LLC
- Current Assignee Address: US CA Livermore
- Agency: Kilpatrick Townsend
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.
Public/Granted literature
- US20110235669A1 ENHANCED VBASIS LASER DIODE PACKAGE Public/Granted day:2011-09-29
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