Invention Grant
- Patent Title: Photomask inspection method, semiconductor device inspection method, and pattern inspection apparatus
- Patent Title (中): 光掩模检查方法,半导体器件检查方法和图案检查装置
-
Application No.: US12533321Application Date: 2009-07-31
-
Publication No.: US08811713B2Publication Date: 2014-08-19
- Inventor: Ryoji Yoshikawa
- Applicant: Ryoji Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-227177 20080904
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G03H1/04 ; G06F17/50

Abstract:
A plurality of photomasks used to manufacture the same semiconductor device, each of the photomasks having a plurality of mutually replaceable unit regions set therein, are inspected to detect a defect. It is determined whether or not the detected defect has a redundancy defect positioned in a unit region replaceable with another unit region to remedy the photomask. Then, when inspecting the second or subsequent photomask, a unit region including the coordinate of a redundancy defect detected in another photomask inspected previously is set to be a non-inspection region, and the non-inspection region is not inspected.
Public/Granted literature
- US20100054577A1 PHOTOMASK INSPECTION METHOD, SEMICONDUCTOR DEVICE INSPECTION METHOD, AND PATTERN INSPECTION APPARATUS Public/Granted day:2010-03-04
Information query