Invention Grant
- Patent Title: Nonvolatile memory device
- Patent Title (中): 非易失性存储器件
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Application No.: US13488897Application Date: 2012-06-05
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Publication No.: US08812777B2Publication Date: 2014-08-19
- Inventor: Jae-Won Cha , Sung-Hoon Ahn
- Applicant: Jae-Won Cha , Sung-Hoon Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0132056 20111209
- Main IPC: G06F12/02
- IPC: G06F12/02
Abstract:
A nonvolatile memory device includes: N (N is an integer equal to or greater than 2) number of nonvolatile memory cells disposed in a flag area of a page, N number of flag page buffers configured to input and output flag data to and from the nonvolatile memory cells of the flag area, and a data input/output control unit configured to select R number of flag page buffers so that the flag data is inputted and outputted from the R selected flag page buffers and no flag data is inputted and outputted through unselected N-R number of flag page buffers, wherein no one flag page buffer of the R selected flag page buffers is immediately adjacent to another one of the R selected flag page buffers.
Public/Granted literature
- US20130151758A1 NONVOLATILE MEMORY DEVICE Public/Granted day:2013-06-13
Information query
