Invention Grant
- Patent Title: Structural feature formation within an integrated circuit
- Patent Title (中): 集成电路内的结构特征形成
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Application No.: US13067240Application Date: 2011-05-18
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Publication No.: US08812997B2Publication Date: 2014-08-19
- Inventor: Gregory Munson Yeric
- Applicant: Gregory Munson Yeric
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An integrated circuit is formed using an lithographic process including a stage of forming a lithographic layer from a plurality of separately printed pattern layers. Within the integrated circuit there is formed a circuit including at least two devices that are matched devices such that the performance of the circuit is degraded if the match devices deviate from having matched performance characteristics. Dummy contacts 32 (structural features) are provided within the circuit design so as to force allocation of functional contacts (structural features) of the matched devices into the same pattern layer thereby reducing inter-device variation in contact position and/or size.
Public/Granted literature
- US20110225555A1 Structural feature formation within an integrated circuit Public/Granted day:2011-09-15
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