Invention Grant
- Patent Title: Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
- Patent Title (中): 电子设备制造系统中气体的原位分析方法和装置
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Application No.: US13237144Application Date: 2011-09-20
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Publication No.: US08813538B2Publication Date: 2014-08-26
- Inventor: David K. Carlson , Satheesh Kuppurao
- Applicant: David K. Carlson , Satheesh Kuppurao
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Dugan & Dugan, PC
- Main IPC: G01N7/00
- IPC: G01N7/00 ; G01N33/00
Abstract:
Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
Public/Granted literature
- US20120006092A1 METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS Public/Granted day:2012-01-12
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