Invention Grant
- Patent Title: Infrared sensor
- Patent Title (中): 红外传感器
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Application No.: US13513510Application Date: 2010-12-14
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Publication No.: US08814426B2Publication Date: 2014-08-26
- Inventor: Kenzo Nakamura , Sei Kitaguchi , Mototaka Ishikawa
- Applicant: Kenzo Nakamura , Sei Kitaguchi , Mototaka Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leason Ellis LLP.
- Priority: JP2009-295857 20091225
- International Application: PCT/JP2010/072436 WO 20101214
- International Announcement: WO2011/078004 WO 20110630
- Main IPC: G01J5/02
- IPC: G01J5/02 ; G01J5/20 ; G01K7/22
Abstract:
An infrared sensor comprises: an electrical insulating film sheet; first and second temperature sensor devices which are provided on one side of the electrical insulating film sheet, and are located at a distance from each other; a pair of contact electrodes, with which the first and second temperature sensor devices are attached respectively, formed on one side of the electrical insulating film sheet; an infrared absorbing film provided on the other side of the electrical insulating film sheet opposite the first temperature sensor device; and an infrared reflector film provided on the same side as the infrared absorbing film opposite the second temperature sensor device. The first and second temperature sensor devices respectively comprise: a thermistor element; and a pair of electrode layers, in which one of them is in contact with the contact electrode, formed both on the upper and lower surfaces of the thermistor element.
Public/Granted literature
- US20120236902A1 INFRARED SENSOR Public/Granted day:2012-09-20
Information query
