Invention Grant
US08815011B2 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal 有权
磁石榴石单晶和使用相同的光学元件以及单晶的制造方法

  • Patent Title: Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
  • Patent Title (中): 磁石榴石单晶和使用相同的光学元件以及单晶的制造方法
  • Application No.: US12806000
    Application Date: 2010-08-27
  • Publication No.: US08815011B2
    Publication Date: 2014-08-26
  • Inventor: Atsushi Ohido
  • Applicant: Atsushi Ohido
  • Applicant Address: JP Tokyo
  • Assignee: TDK Corporation
  • Current Assignee: TDK Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff PLC
  • Priority: JP2004-335457 20041119; JP2005-286734 20050930; JP2005-303286 20051018; JP2005-311682 20051026; JP2005-311688 20051026
  • Main IPC: C30B9/12
  • IPC: C30B9/12 C30B29/28 C30B19/00 G02F1/00 G02F1/09
Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
Abstract:
The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5
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