Invention Grant
- Patent Title: Bonding wire for semiconductor
- Patent Title (中): 半导体用导线
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Application No.: US12993401Application Date: 2010-02-12
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Publication No.: US08815019B2Publication Date: 2014-08-26
- Inventor: Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
- Applicant: Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
- Applicant Address: JP Tokyo JP Saitama
- Assignee: Nippon Steel & Sumikin Materials., Ltd.,Nippon Micrometal Corporation
- Current Assignee: Nippon Steel & Sumikin Materials., Ltd.,Nippon Micrometal Corporation
- Current Assignee Address: JP Tokyo JP Saitama
- Agency: Troutman Sanders LLP
- Priority: JP2009-063874 20090317
- International Application: PCT/JP2010/052029 WO 20100212
- International Announcement: WO2010/106851 WO 20100923
- Main IPC: B23K35/34
- IPC: B23K35/34

Abstract:
It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
Public/Granted literature
- US20110120594A1 BONDING WIRE FOR SEMICONDUCTOR Public/Granted day:2011-05-26
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