Invention Grant
- Patent Title: Method of etching surface layer portion of silicon wafer and method of analyzing metal contamination of silicon wafer
- Patent Title (中): 蚀刻硅晶片表面层部分的方法及分析硅晶片金属污染的方法
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Application No.: US13238652Application Date: 2011-09-21
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Publication No.: US08815107B2Publication Date: 2014-08-26
- Inventor: Jiahong Wu , Shabani B. Mohammad
- Applicant: Jiahong Wu , Shabani B. Mohammad
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2010-215058 20100927
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/66 ; G01N1/32
Abstract:
An aspect of the present invention relates to a method of etching a surface layer portion of a silicon wafer comprising: positioning the silicon wafer within a sealed vessel containing a mixed acid A of hydrofluoric acid and sulfuric acid so that the silicon wafer is not in contact with mixed acid A; introducing a solution B in the form of nitric acid containing nitrogen oxides into the sealed vessel and causing solution B to mix with mixed acid A; and vapor phase decomposing the surface layer portion of the silicon wafer within the sealed vessel within which mixed acid A and solution B have been mixed.
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