Invention Grant
US08815491B2 Chemically amplified negative resist composition and patterning process
有权
化学放大负光刻胶组合物和图案化工艺
- Patent Title: Chemically amplified negative resist composition and patterning process
- Patent Title (中): 化学放大负光刻胶组合物和图案化工艺
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Application No.: US13407325Application Date: 2012-02-28
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Publication No.: US08815491B2Publication Date: 2014-08-26
- Inventor: Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
- Applicant: Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-041517 20110228
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/027
Abstract:
A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.
Public/Granted literature
- US20120219888A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2012-08-30
Information query
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