Invention Grant
US08815629B2 Method of manufacturing an optical reflector with semiconductor nanocrystals
有权
制造具有半导体纳米晶体的光学反射体的方法
- Patent Title: Method of manufacturing an optical reflector with semiconductor nanocrystals
- Patent Title (中): 制造具有半导体纳米晶体的光学反射体的方法
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Application No.: US13572121Application Date: 2012-08-10
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Publication No.: US08815629B2Publication Date: 2014-08-26
- Inventor: Kavita Surana , Mathieu Baudrit , Pierre Mur , Philippe Thony
- Applicant: Kavita Surana , Mathieu Baudrit , Pierre Mur , Philippe Thony
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1157505 20110824
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/46 ; H01L33/10

Abstract:
A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.
Public/Granted literature
- US20130052772A1 METHOD OF MANUFACTURING AN OPTICAL REFLECTOR WITH SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2013-02-28
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