Invention Grant
- Patent Title: Diamond SOI with thin silicon nitride layer and related methods
- Patent Title (中): 具有薄氮化硅层的金刚石SOI及相关方法
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Application No.: US12719988Application Date: 2010-03-09
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Publication No.: US08815641B2Publication Date: 2014-08-26
- Inventor: Rick C. Jerome , Francois Hebert , Craig McLachlan , Kevin Hoopingarner
- Applicant: Rick C. Jerome , Francois Hebert , Craig McLachlan , Kevin Hoopingarner
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/20
Abstract:
A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.
Public/Granted literature
- US20110186840A1 DIAMOND SOI WITH THIN SILICON NITRIDE LAYER Public/Granted day:2011-08-04
Information query
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