Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12550540Application Date: 2009-08-31
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Publication No.: US08815657B2Publication Date: 2014-08-26
- Inventor: Suguru Ozawa , Atsuo Isobe , Takashi Hamada , Junpei Momo , Hiroaki Honda , Takashi Shingu , Tetsuya Kakehata
- Applicant: Suguru Ozawa , Atsuo Isobe , Takashi Hamada , Junpei Momo , Hiroaki Honda , Takashi Shingu , Tetsuya Kakehata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-228109 20080905
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.
Public/Granted literature
- US20100075470A1 METHOD OF MANUFACTURING SOI SUBSTRATE Public/Granted day:2010-03-25
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