A method of forming a FinFET device involves performing an epitaxial growth process to form a layer of semiconducting material on a semiconducting substrate, wherein a first portion of the layer of semiconducting material will become a fin structure for the FinFET device and wherein a plurality of second portions of the layer of semiconducting material will become source/drain structures of the FinFET device, forming a gate insulation layer around at least a portion of the fin structure and forming a gate electrode above the gate insulation layer.