Invention Grant
US08815673B2 Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknesses
有权
使用氮注入的氧化物层形成MOSFET器件以形成具有不同厚度的栅极绝缘层的方法
- Patent Title: Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknesses
- Patent Title (中): 使用氮注入的氧化物层形成MOSFET器件以形成具有不同厚度的栅极绝缘层的方法
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Application No.: US13480947Application Date: 2012-05-25
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Publication No.: US08815673B2Publication Date: 2014-08-26
- Inventor: Jin-ho Do , Moon-han Park , Weon-hong Kim , Kyung-il Hong
- Applicant: Jin-ho Do , Moon-han Park , Weon-hong Kim , Kyung-il Hong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0052994 20110601
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/28 ; H01L29/51
Abstract:
In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.
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