Method of processing MIM capacitors to reduce leakage current

Invention Grant

US08815677B2 Method of processing MIM capacitors to reduce leakage current 有权

Title translation: MIM电容器的处理方法，以减少泄漏电流

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Patent Title: Method of processing MIM capacitors to reduce leakage current
Patent Title (中): MIM电容器的处理方法，以减少泄漏电流
Application No.: US13159842

Application Date: 2011-06-14
Publication No.: US08815677B2

Publication Date: 2014-08-26
Inventor: Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
Applicant: Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
Applicant Address: US CA San Jose JP Tokyo
Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee Address: US CA San Jose JP Tokyo
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/20

Method of processing MIM capacitors to reduce leakage current

Abstract:

A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.

Abstract(Chinese):

公开了一种用于处理电介质材料和电极以减少泄漏电流的方法。该方法包括在氧化气氛中的后介电退火处理，以降低电介质材料中氧空位的浓度。该方法还包括在氧化气氛中的后金属化退火处理，以减少电极/电介质界面处的界面态的浓度，并进一步降低电介质材料中氧空位的浓度。

Public/Granted literature

US20120322220A1 METHOD OF PROCESSING MIM CAPACITORS TO REDUCE LEAKAGE CURRENT Public/Granted day:2012-12-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）