Invention Grant
- Patent Title: Method of manufacturing power device
- Patent Title (中): 功率器件制造方法
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Application No.: US13550920Application Date: 2012-07-17
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Publication No.: US08815688B2Publication Date: 2014-08-26
- Inventor: Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
- Applicant: Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2011-0076559 20110801
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
Public/Granted literature
- US20130034939A1 METHOD OF MANUFACTURING POWER DEVICE Public/Granted day:2013-02-07
Information query
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