Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).