Invention Grant
- Patent Title: Method of forming a germanium thin film
- Patent Title (中): 形成锗薄膜的方法
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Application No.: US13780842Application Date: 2013-02-28
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Publication No.: US08815714B2Publication Date: 2014-08-26
- Inventor: Akinobu Kakimoto , Shigeru Nakajima , Kazuhide Hasebe
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-46829 20120302
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.
Public/Granted literature
- US20130230975A1 METHOD OF FORMING A GERMANIUM THIN FILM Public/Granted day:2013-09-05
Information query
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