Invention Grant
US08815719B2 Defect-free junction formation using octadecaborane self-amorphizing implants
有权
使用十八硼烷自身无定形植入物的无缺陷连接形成
- Patent Title: Defect-free junction formation using octadecaborane self-amorphizing implants
- Patent Title (中): 使用十八硼烷自身无定形植入物的无缺陷连接形成
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Application No.: US13418069Application Date: 2012-03-12
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Publication No.: US08815719B2Publication Date: 2014-08-26
- Inventor: Jiping Li , Aaron Muir Hunter , Bruce E. Adams , Theodore Moffitt , Stephen Moffatt
- Applicant: Jiping Li , Aaron Muir Hunter , Bruce E. Adams , Theodore Moffitt , Stephen Moffatt
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/265
Abstract:
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
Public/Granted literature
- US20120171853A1 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS Public/Granted day:2012-07-05
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