Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
- Patent Title (中): 半导体封装及其制造方法
-
Application No.: US13174959Application Date: 2011-07-01
-
Publication No.: US08815731B2Publication Date: 2014-08-26
- Inventor: Young Lyong Kim , Hyeongseob Kim , Jongho Lee , Eunchul Ahn
- Applicant: Young Lyong Kim , Hyeongseob Kim , Jongho Lee , Eunchul Ahn
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2010-0063538 20100701
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00 ; H01L23/31 ; H01L23/498

Abstract:
A semiconductor package and a method for fabricating the same. The semiconductor package includes a first substrate including a first pad, a second substrate spaced apart from the first substrate and where a second pad is formed to face the first pad, a first bump electrically connecting the first pad to the second pad, and a second bump mechanically connecting the first substrate to the second substrate is disposed between the first substrate where the first pad is not formed and the second substrate where the second pad is not formed. A coefficient of thermal expansion (CTE) of the second bump is smaller than that of the first bump.
Public/Granted literature
- US20120001329A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-01-05
Information query
IPC分类: