Invention Grant
US08815739B2 FinFET device with a graphene gate electrode and methods of forming same
有权
具有石墨烯栅电极的FinFET器件及其形成方法
- Patent Title: FinFET device with a graphene gate electrode and methods of forming same
- Patent Title (中): 具有石墨烯栅电极的FinFET器件及其形成方法
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Application No.: US13545621Application Date: 2012-07-10
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Publication No.: US08815739B2Publication Date: 2014-08-26
- Inventor: Zoran Krivokapic , Bhagawan Sahu
- Applicant: Zoran Krivokapic , Bhagawan Sahu
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
One illustrative device disclosed herein includes at least one fin comprised of a semiconducting material, a layer of gate insulation material positioned adjacent an outer surface of the fin, a gate electrode comprised of graphene positioned on the layer of gate insulation material around at least a portion of the fin, and an insulating material formed on the gate electrode.
Public/Granted literature
- US20140015015A1 FINFET DEVICE WITH A GRAPHENE GATE ELECTRODE AND METHODS OF FORMING SAME Public/Granted day:2014-01-16
Information query
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