Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13497249Application Date: 2011-11-25
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Publication No.: US08816326B2Publication Date: 2014-08-26
- Inventor: Huaxiang Yin , Jun Luo , Chao Zhao , Honggang Liu , Dapeng Chen
- Applicant: Huaxiang Yin , Jun Luo , Chao Zhao , Honggang Liu , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Martine Penilla Group, LLP
- Priority: CN201110339415 20111101
- International Application: PCT/CN2011/001965 WO 20111125
- International Announcement: WO2013/063726 WO 20130510
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/778 ; H01L29/08
Abstract:
A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region.
Public/Granted literature
- US20130105763A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-05-02
Information query
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