Invention Grant
- Patent Title: TFT array substrate and manufacturing method thereof
- Patent Title (中): TFT阵列基板及其制造方法
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Application No.: US13664852Application Date: 2012-10-31
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Publication No.: US08816346B2Publication Date: 2014-08-26
- Inventor: Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
- Applicant: Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
- Applicant Address: CN Beijing
- Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.
- Current Assignee: Beijing BOE Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Hasse & Nesbitt LLC
- Agent Daniel F. Nesbitt
- Priority: CN200710063236 20070104
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/66 ; H01L27/12

Abstract:
A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.
Public/Granted literature
- US20130056739A1 TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-03-07
Information query
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