Invention Grant
- Patent Title: Nitride semiconductor device
- Patent Title (中): 氮化物半导体器件
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Application No.: US13105337Application Date: 2011-05-11
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Publication No.: US08816366B2Publication Date: 2014-08-26
- Inventor: Toshiyuki Takizawa , Tetsuzo Ueda
- Applicant: Toshiyuki Takizawa , Tetsuzo Ueda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-291544 20081113
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L21/02 ; B82Y20/00 ; H01L33/32 ; H01S5/32 ; H01S5/223 ; H01L33/24 ; H01L33/16 ; H01S5/20 ; H01S5/343
Abstract:
An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.
Public/Granted literature
- US20110211607A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2011-09-01
Information query
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