Invention Grant
- Patent Title: Light emitting diode with graphene layer
- Patent Title (中): 具有石墨烯层的发光二极管
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Application No.: US13689736Application Date: 2012-11-29
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Publication No.: US08816374B2Publication Date: 2014-08-26
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210122544 20120425
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L33/46 ; B82Y99/00 ; H01L33/10 ; H01L33/40

Abstract:
A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, and a reflection layer. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate in sequence. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer. The reflection layer covers the second semiconductor layer.
Public/Granted literature
- US20130285092A1 LIGHT EMITTING DIODE Public/Granted day:2013-10-31
Information query
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