Invention Grant
- Patent Title: Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component
- Patent Title (中): 辐射发射半导体体,辐射发射半导体体和辐射发射半导体部件的制造方法
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Application No.: US13698302Application Date: 2011-06-08
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Publication No.: US08816375B2Publication Date: 2014-08-26
- Inventor: Herbert Brunner , Patrick Ninz
- Applicant: Herbert Brunner , Patrick Ninz
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102010023343 20100610
- International Application: PCT/EP2011/059485 WO 20110608
- International Announcement: WO2011/154441 WO 20111215
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.
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