Invention Grant
US08816375B2 Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component 有权
辐射发射半导体体,辐射发射半导体体和辐射发射半导体部件的制造方法

  • Patent Title: Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component
  • Patent Title (中): 辐射发射半导体体,辐射发射半导体体和辐射发射半导体部件的制造方法
  • Application No.: US13698302
    Application Date: 2011-06-08
  • Publication No.: US08816375B2
    Publication Date: 2014-08-26
  • Inventor: Herbert BrunnerPatrick Ninz
  • Applicant: Herbert BrunnerPatrick Ninz
  • Applicant Address: DE Regensburg
  • Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee Address: DE Regensburg
  • Agency: Slater & Matsil, L.L.P.
  • Priority: DE102010023343 20100610
  • International Application: PCT/EP2011/059485 WO 20110608
  • International Announcement: WO2011/154441 WO 20111215
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Radiation-emitting semiconductor body, method for producing a radiation-emitting semiconductor body and radiation-emitting semiconductor component
Abstract:
A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.
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