Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13756579Application Date: 2013-02-01
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Publication No.: US08816376B2Publication Date: 2014-08-26
- Inventor: Hiroshi Ohno
- Applicant: Panasonic Corporation
- Applicant Address: JP Kadoma-Shi, Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Kadoma-Shi, Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-183316 20100818
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/00

Abstract:
A semiconductor light emitting device includes a multilayer structure formed on a substrate and including a plurality of semiconductor layers including a light-emitting layer. The multilayer structure includes an optical waveguide having ridge structure provided at an upper part of the multilayer structure. The optical waveguide extends from a front facet to a rear facet of the multilayer structure, and includes a straight waveguide section which is inclined to a normal to the front facet of the multilayer structure and extends from the front facet, and a curved waveguide section which perpendicularly reaches the rear facet of the multilayer structure. The curved waveguide section is closer to the rear facet of the multilayer structure than a center of the optical waveguide is.
Public/Granted literature
- US20130292723A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-11-07
Information query
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