Invention Grant
US08816376B2 Semiconductor light emitting device 有权
半导体发光器件

Semiconductor light emitting device
Abstract:
A semiconductor light emitting device includes a multilayer structure formed on a substrate and including a plurality of semiconductor layers including a light-emitting layer. The multilayer structure includes an optical waveguide having ridge structure provided at an upper part of the multilayer structure. The optical waveguide extends from a front facet to a rear facet of the multilayer structure, and includes a straight waveguide section which is inclined to a normal to the front facet of the multilayer structure and extends from the front facet, and a curved waveguide section which perpendicularly reaches the rear facet of the multilayer structure. The curved waveguide section is closer to the rear facet of the multilayer structure than a center of the optical waveguide is.
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