Invention Grant
- Patent Title: Light emitting element and method for manufacturing same
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13929465Application Date: 2013-06-27
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Publication No.: US08816378B2Publication Date: 2014-08-26
- Inventor: Shinji Nunotani , Yasuhiko Akaike , Kayo Inoue , Katsufumi Kondo , Tokuhiko Matsunaga
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-290135 20101227
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/40

Abstract:
According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.
Public/Granted literature
- US20130292729A1 LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-11-07
Information query
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