Invention Grant
- Patent Title: Light emitting device and manufacture method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US14157369Application Date: 2014-01-16
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Publication No.: US08816386B2Publication Date: 2014-08-26
- Inventor: Tzer-Perng Chen , Jen-Chau Wu , Chuan-Cheng Tu , Yuh-Ren Shieh
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/46 ; H01L33/38 ; H01L33/36 ; H01L33/62

Abstract:
A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.
Public/Granted literature
- US20140131760A1 LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF Public/Granted day:2014-05-15
Information query
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