Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
-
Application No.: US14029145Application Date: 2013-09-17
-
Publication No.: US08816387B2Publication Date: 2014-08-26
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN2011101107727 20110429
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/06 ; H01L27/15

Abstract:
A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.
Public/Granted literature
- US20140014901A1 LIGHT EMITTING DIODE Public/Granted day:2014-01-16
Information query
IPC分类: