Invention Grant
US08816392B2 Semiconductor device having gate structures to reduce the short channel effects
有权
具有栅极结构以减少短沟道效应的半导体器件
- Patent Title: Semiconductor device having gate structures to reduce the short channel effects
- Patent Title (中): 具有栅极结构以减少短沟道效应的半导体器件
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Application No.: US13121998Application Date: 2011-03-02
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Publication No.: US08816392B2Publication Date: 2014-08-26
- Inventor: Huilong Zhu , Qingqing Liang
- Applicant: Huilong Zhu , Qingqing Liang
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Troutman Sanders LLP
- Priority: CN201010223858 20100701
- International Application: PCT/CN2011/000336 WO 20110302
- International Announcement: WO2012/000300 WO 20120105
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L33/00 ; H01L21/02
Abstract:
A semiconductor device comprises a semiconductor substrate on an insulating layer; and a second gate that is located on the insulating layer and is embedded at least partially in the semiconductor substrate. A method for forming a semiconductor device comprises: forming a semiconductor substrate on an insulating layer; forming a void within the semiconductor substrate, with the insulating layer being exposed by the void; and forming a second gate, with the void being filled with at least one part of the second gate. It facilitates the reduction of the short channel effects, resistances of the source and drain regions, and parasitic capacitances.
Public/Granted literature
- US20120001229A1 Semiconductor Device and Method for Forming the Same Public/Granted day:2012-01-05
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