Invention Grant
- Patent Title: Compound semiconductor device and manufacturing method thereof
- Patent Title (中): 化合物半导体器件及其制造方法
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Application No.: US12721052Application Date: 2010-03-10
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Publication No.: US08816408B2Publication Date: 2014-08-26
- Inventor: Kozo Makiyama , Toshihide Kikkawa
- Applicant: Kozo Makiyama , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-86492 20090331
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/78 ; H01L29/20 ; H01L29/06 ; H01L29/423
Abstract:
A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.
Public/Granted literature
- US20100244104A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-30
Information query
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