Invention Grant
- Patent Title: Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics
- Patent Title (中): 半导体成像装置与像素区域等区域的半导体元件具有相同的特性
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Application No.: US12725511Application Date: 2010-03-17
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Publication No.: US08816413B2Publication Date: 2014-08-26
- Inventor: Hidetoshi Koike
- Applicant: Hidetoshi Koike
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-129262 20090528
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L31/112
Abstract:
Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area.
Public/Granted literature
Information query
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