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US08816418B2 Semiconductor memory devices and methods of fabricating the same 有权
半导体存储器件及其制造方法

Semiconductor memory devices and methods of fabricating the same
Abstract:
A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode layer. The supporting pattern includes germanium oxide.
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