Invention Grant
- Patent Title: Semiconductor memory devices and methods of fabricating the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US13617148Application Date: 2012-09-14
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Publication No.: US08816418B2Publication Date: 2014-08-26
- Inventor: Hyongsoo Kim , Eunkee Hong , Kwangtae Hwang
- Applicant: Hyongsoo Kim , Eunkee Hong , Kwangtae Hwang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0112404 20111031
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94 ; H01L29/66

Abstract:
A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode layer. The supporting pattern includes germanium oxide.
Public/Granted literature
- US20130105873A1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-05-02
Information query
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