Invention Grant
- Patent Title: Method and structure for forming fin resistors
- Patent Title (中): 形成鳍式电阻的方法和结构
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Application No.: US13472605Application Date: 2012-05-16
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Publication No.: US08816436B2Publication Date: 2014-08-26
- Inventor: Kangguo Cheng , Thomas N. Adam , Ali Khakifirooz , Alexander Reznicek
- Applicant: Kangguo Cheng , Thomas N. Adam , Ali Khakifirooz , Alexander Reznicek
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard M. Cohn
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/62 ; H01L29/00 ; H01L27/06 ; H01L21/02
Abstract:
A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal diffuses dopants from the epitaxial regions into the fins. Contacts are connected to endpoint epitaxial regions to allow the resistor to be connected to more complex integrated circuits.
Public/Granted literature
- US20130307076A1 METHOD AND STRUCTURE FOR FORMING FIN RESISTORS Public/Granted day:2013-11-21
Information query
IPC分类:
