Invention Grant
- Patent Title: Magnetoresistive device and a method of forming the same
- Patent Title (中): 磁阻装置及其形成方法
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Application No.: US13725902Application Date: 2012-12-21
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Publication No.: US08816456B2Publication Date: 2014-08-26
- Inventor: Hao Meng , Rachid Sbiaa
- Applicant: Hao Meng , Rachid Sbiaa
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.
Public/Granted literature
- US20130161770A1 MAGNETORESISTIVE DEVICE AND A METHOD OF FORMING THE SAME Public/Granted day:2013-06-27
Information query
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