Invention Grant
- Patent Title: Capacitor structure
- Patent Title (中): 电容结构
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Application No.: US12187407Application Date: 2008-08-07
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Publication No.: US08816474B2Publication Date: 2014-08-26
- Inventor: Andre Hanke , Oliver Nagy
- Applicant: Andre Hanke , Oliver Nagy
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
One or more embodiments relate to a semiconductor device, comprising: a substrate; and a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together, each of the second conductive vias passing through the substrate, the second conductive vias spacedly disposed from the first conductive vias.
Public/Granted literature
- US20100032800A1 Capacitor Structure Public/Granted day:2010-02-11
Information query
IPC分类: