Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12068398Application Date: 2008-02-06
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Publication No.: US08816484B2Publication Date: 2014-08-26
- Inventor: Jun Koyama , Shunpei Yamazaki
- Applicant: Jun Koyama , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-030491 20070209
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A semiconductor device, in which an integrated circuit portion and an antenna are easily connected, can surely transmit and receive a signal to and from a communication device. The integrated circuit portion is formed of a thin film transistor over a surface of a substrate so that the area occupied by the integrated circuit portion is increased. The antenna is provided over the integrated circuit portion, and the thin film transistor and the antenna are connected. Further, the area over the substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as the area of the surface of the substrate. Thus, the size of the integrated circuit portion can be close to the desired size of the antenna, so that the integrated circuit portion and the antenna are easily connected and the semiconductor device can surely transmit and receive a signal to and from the communication device.
Public/Granted literature
- US20080191332A1 Semiconductor device Public/Granted day:2008-08-14
Information query
IPC分类:
