Invention Grant
- Patent Title: Electrical interconnections of semiconductor devices and methods for fabricating the same
- Patent Title (中): 半导体器件的电气互连及其制造方法
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Application No.: US13826694Application Date: 2013-03-14
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Publication No.: US08816499B2Publication Date: 2014-08-26
- Inventor: Ju-il Choi , Jeong-Woo Park , Jeonggi Jin , Yeun-Sang Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2012-0055443 20120524
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L23/00 ; H01L23/31
Abstract:
Provided are electrical interconnections and methods for fabricating the same. The electrical interconnection may include a substrate including a bonding pad, a solder ball electrically connected to the bonding pad, a solder supporter on the bonding pad, a portion of the solder ball filling the solder supporter, and a metal layer between the bonding pad and the solder supporter, the metal layer having an ionization tendency lower than the bonding pad.
Public/Granted literature
- US20130313707A1 Electrical Interconnections of Semiconductor Devices and Methods for Fabricating the Same Public/Granted day:2013-11-28
Information query
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