Invention Grant
- Patent Title: Semiconductor device having peripheral polymer structures
- Patent Title (中): 具有外围聚合物结构的半导体器件
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Application No.: US13715868Application Date: 2012-12-14
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Publication No.: US08816500B2Publication Date: 2014-08-26
- Inventor: Manfred Schneegans , Ivan Nikitin
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a semiconductor chip including a first main face and a second main face wherein the second main face is the backside of the semiconductor chip. Further, the semiconductor device includes an electrically conductive layer, in particular an electrically conductive layer, arranged on a first region of the second main face of the semiconductor chip. Further, the semiconductor device includes a polymer structure arranged on a second region of the second main face of the semiconductor chip, wherein the second region is a peripheral region of the second main face of the semiconductor chip and the first region is adjacent to the second region.
Public/Granted literature
- US20140167266A1 SEMICONDUCTOR DEVICE HAVING PERIPHERAL POLYMER STRUCTURES Public/Granted day:2014-06-19
Information query
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