Invention Grant
- Patent Title: Semiconductor integrated circuit, and reception apparatus and radio communication terminal including semiconductor integrated circuit
- Patent Title (中): 半导体集成电路,以及包括半导体集成电路的接收装置和无线通信终端
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Application No.: US13662471Application Date: 2012-10-27
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Publication No.: US08816766B2Publication Date: 2014-08-26
- Inventor: Yutaka Igarashi , Yusaku Katsube
- Applicant: Renesas Mobile Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Mobile Corporation
- Current Assignee: Renesas Mobile Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-235557 20111027
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
A semiconductor integrated circuit includes: a first capacitance element and a second capacitance element; a first amplification circuit that amplifies a potential difference of a first voltage signal and a second voltage signal supplied via the first capacitance element and the second capacitance element, respectively, to output a first amplification signal and a second amplification signal; a first resistance element that feeds back the first amplification signal to one input terminal of the first amplification circuit; a second resistance element that feeds back the second amplification signal to another input terminal of the first amplification circuit; a voltage generator that generates a predetermined voltage; and a third resistance element that transmits the predetermined voltage generated by the voltage generator to each input terminal of the first amplification circuit.
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