Invention Grant
- Patent Title: Defect inspection method
- Patent Title (中): 缺陷检查方法
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Application No.: US13673298Application Date: 2012-11-09
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Publication No.: US08817251B2Publication Date: 2014-08-26
- Inventor: Noriaki Tsuchiya
- Applicant: Noriaki Tsuchiya
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-054213 20120312
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/95 ; G01N21/956

Abstract:
A defect inspection method according to the present invention is a defect inspection method for inspecting a defect of a semiconductor wafer, including the steps of: (a) forming a mark on a semiconductor wafer that is an inspection object, the mark corresponding to the size of a device chip that will be obtained from the semiconductor wafer, the mark being formed with respect to a predetermined device chip on the semiconductor wafer; and (b) during a predetermined process included in a semiconductor wafer process or before the semiconductor wafer process, performing a defect inspection on the semiconductor wafer and recognizing defect information based on the mark as a reference.
Public/Granted literature
- US20130235373A1 DEFECT INSPECTION METHOD Public/Granted day:2013-09-12
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