Invention Grant
- Patent Title: Dark field diffraction based overlay
- Patent Title (中): 基于暗场衍射的覆盖
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Application No.: US13454870Application Date: 2012-04-24
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Publication No.: US08817273B2Publication Date: 2014-08-26
- Inventor: Hwan J. Jeong , Silvio J. Rabello , Thomas Andre Casavant
- Applicant: Hwan J. Jeong , Silvio J. Rabello , Thomas Andre Casavant
- Applicant Address: US CA Milpitas
- Assignee: Nanometrics Incorporated
- Current Assignee: Nanometrics Incorporated
- Current Assignee Address: US CA Milpitas
- Agency: Silicon Valley Patent Group LLP
- Main IPC: G01B11/14
- IPC: G01B11/14

Abstract:
A dark field diffraction based overlay metrology device illuminates an overlay target that has at least three pads for an axis, the three pads having different programmed offsets. The overlay target may be illuminated using two obliquely incident beams of light from opposite azimuth angles or using normally incident light. Two dark field images of the overlay target are collected using ±1st diffraction orders to produce at least six independent signals. For example, the +1st diffraction order may be collected from one obliquely incident beam of light and the −1st diffraction order may be collected from the other obliquely incident beam of light. Alternatively, the ±1st diffraction orders may be separately detected from the normally incident light to produce the two dark field images of the overlay target. The six independent signals from the overlay target are used to determine an overlay error for the sample along the axis.
Public/Granted literature
- US20130278942A1 DARK FIELD DIFFRACTION BASED OVERLAY Public/Granted day:2013-10-24
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