Invention Grant
US08817426B2 Magnetic sensor having CoFeBTa in pinned and free layer structures
有权
磁传感器具有固定和自由层结构的CoFeBTa
- Patent Title: Magnetic sensor having CoFeBTa in pinned and free layer structures
- Patent Title (中): 磁传感器具有固定和自由层结构的CoFeBTa
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Application No.: US13275208Application Date: 2011-10-17
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Publication No.: US08817426B2Publication Date: 2014-08-26
- Inventor: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- Applicant: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.
Public/Granted literature
- US20130094108A1 MAGNETIC SENSOR HAVING CoFeBTa IN PINNED AND FREE LAYER STRUCTURES Public/Granted day:2013-04-18
Information query
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