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US08817515B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
Abstract:
Each of m word lines is connected to n memory cells in a corresponding one of rows of m×n memory cells. Each of n bit lines is connected to m memory cells in a corresponding one of columns of m×n memory cells, and each of n source lines is connected to m memory cells in a corresponding one of columns of m×n memory cells. N first switching elements switch connection states between a reference node and the n bit lines, and n second switching elements switch connection states between the reference node and the n source lines. N third switching elements switch connection states between the write driver and the n bit lines, and n fourth switching elements switch connection states between the write driver and the n source lines.
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