Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13957260Application Date: 2013-08-01
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Publication No.: US08817515B2Publication Date: 2014-08-26
- Inventor: Kazuyuki Kouno
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-019790 20110201
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/08 ; G11C7/10 ; G11C13/00 ; G11C11/22

Abstract:
Each of m word lines is connected to n memory cells in a corresponding one of rows of m×n memory cells. Each of n bit lines is connected to m memory cells in a corresponding one of columns of m×n memory cells, and each of n source lines is connected to m memory cells in a corresponding one of columns of m×n memory cells. N first switching elements switch connection states between a reference node and the n bit lines, and n second switching elements switch connection states between the reference node and the n source lines. N third switching elements switch connection states between the write driver and the n bit lines, and n fourth switching elements switch connection states between the write driver and the n source lines.
Public/Granted literature
- US20130314969A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-11-28
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