Invention Grant
- Patent Title: Two capacitor self-referencing nonvolatile bitcell
- Patent Title (中): 两个电容器自参考非易失性位单元
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Application No.: US13753814Application Date: 2013-01-30
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Publication No.: US08817520B2Publication Date: 2014-08-26
- Inventor: Sudhanshu Khanna , Steven Craig Bartling
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frederick J. Telecky, Jr.
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
A system on chip (SoC) provides a memory array of self referencing nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit coupled to the node Q. A first read capacitor is coupled to the bit line via a transfer device controlled by a first control signal. A second read capacitor coupled to the bit line via another transfer device controlled by a second control signal. A sense amp is coupled between the first read capacitor and the second read capacitor.
Public/Granted literature
- US20140211533A1 Two Capacitor Self-Referencing Nonvolatile Bitcell Public/Granted day:2014-07-31
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