Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13467097Application Date: 2012-05-09
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Publication No.: US08817527B2Publication Date: 2014-08-26
- Inventor: Hidetomo Kobayashi , Masashi Fujita , Takuro Ohmaru
- Applicant: Hidetomo Kobayashi , Masashi Fujita , Takuro Ohmaru
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-108623 20110513
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G06F12/08

Abstract:
When a CPU provided with a latch memory is operated, a constant storage method or an end storage method is selected depending on what is processed by the CPU; thus, the CPU provided with a latch memory has low power consumption. When the CPU provided with a latch memory is operated, in the case where the number of times of turning on and off the power source is high, a constant storage method is employed and in the case where the number of times of turning on and off the power source is low, an end storage method is employed. Whether a constant storage method or an end storage method is selected is determined based on the threshold value set depending on power consumption.
Public/Granted literature
- US20120287703A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-11-15
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