Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13864015Application Date: 2013-04-16
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Publication No.: US08817552B2Publication Date: 2014-08-26
- Inventor: Hiroyuki Nagashima , Naoya Tokiwa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-050626 20080229
- Main IPC: G11C8/08
- IPC: G11C8/08

Abstract:
A semiconductor memory device comprises a plurality of memory layers arranged in multilayer, each memory layer including a cell array, the cell array containing a plurality of first parallel lines, a plurality of second parallel lines arranged crossing the first lines, and a plurality of memory cells connected at intersections of the first lines and the second lines; a pulse generator operative to generate pulses required for data access to the memory cell; and a control means operative to control the pulse generator such that the pulse output from the pulse generator has energy in accordance with the memory layer to which the access target memory cell belongs.
Public/Granted literature
- US20130308368A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-11-21
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